Compressively stressed FET device structures

ABSTRACT

An FET device structure has a Fin-FET device with a fin of a Si based material. An oxide element is abutting the fin and exerts pressure onto the fin. The Fin-FET device channel is compressively stressed due to the pressure on the fin. A further FET device structure has Fin-FET devices in a row. An oxide element extending perpendicularly to the row of fins is abutting the fins and exerts pressure onto the fins. Device channels of the Fin-FET devices are compressively stressed due to the pressure on the fins.

CROSS REFERENCE TO A RELATED APPLICATION

This application is a Division of application Ser. No. 12/813,311, filedJun. 10, 2010, which is incorporated herein by reference in itsentirety.

BACKGROUND

The present invention relates to electronic devices of very large scaleintegration (VLSI) circuits. In particular, it relates to Fin type FETdevices.

As FET (Field-Effect Transistor) devices are being scaled down, thetechnology becomes more complex, and changes in device structures andnew fabrication methods are needed to maintain the expected performanceimprovements from one successive device generation to the next. Fin-FETor Tri-Gate devices offer possible avenues to continue on the path ofminiaturization.

BRIEF SUMMARY

An FET device structure is disclosed which has a Fin-FET device with afin of a Si based material. An oxide element is abutting the fin andexerts pressure onto the fin. the Fin-FET device channel iscompressively stressed due to the pressure on the fin.

An FET device structure is disclosed which has at least two Fin-FETdevices in a row having fins. An oxide element extending perpendicularlyto the row of fins is abutting the fins and exerts pressure onto thefins. Device channels of the Fin-FET devices are compressively stresseddue to the pressure on the fins.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

These and other features of the present invention will become apparentfrom the accompanying detailed description and drawings, wherein:

FIG. 1 symbolically shows a semiconductor fin at a commencing stage ofthe processing for an embodiment of the disclosure;

FIG. 2 symbolically shows regions and masking of a semiconductor fin inan embodiment of the disclosure;

FIG. 3 symbolically shows converting to oxide regions of the fin;

FIG. 4 symbolically shows a further stage in processing;

FIG. 5 symbolically shows a stressed FET device structure in anembodiment of the disclosure;

FIG. 6 symbolically shows a semiconductor member, at a commencing stageof the processing for an embodiment of the disclosure;

FIG. 7 symbolically shows regions and masking of a semiconductor memberin an embodiment of the disclosure;

FIG. 8 symbolically shows oxide elements in the semiconductor member ata further stage in processing;

FIG. 9 symbolically shows the state of processing after patterning thesemiconductor member; and

FIG. 10 symbolically shows a stressed FET device structure in anembodiment of the disclosure.

DETAILED DESCRIPTION

It is understood that Field Effect Transistor-s (FET) are well known inthe electronic arts. Standard components of an FET are the source, thedrain, the body inbetween the source and the drain, and the gate. Thegate is overlaying the body and is capable to induce a conductingchannel in the body between the source and the drain. In the usualnomenclature, the channel is hosted by the body. The gate is typicallyseparated from the body by the gate insulator, or gate dielectric.Depending whether the “on state” current in the channel is carried byelectrons or by holes, the FET comes in two types: as NFET or PFET. (Indifferent nomenclature the NFET and PFET devices are often referred toas NMOS and PMOS devices.)

A Fin-FET, or Tri-Gate, device is an FET device but with a particulargeometric configuration. These devices are non-planar, they are threedimensional structures hosted by a fin structure. In Fin-FETs, the bodyof the transistor is formed in a fin rising out of a planar background,typically having both vertical and horizontal surfaces. The gate of theFin-FET may engage the top surface, as well as the vertically orientedbody surfaces on both faces, or sidewalls, resulting in several planesbeing used for transistor channel formation. Such FET devices, withfin-type bodies, have several advantages as known in the art. Inembodiments of the present invention, the dimensions of fin structuresthat serve as fin-type device bodies may be of a height of about 5 nm to50 nm, and of a width of between 3 nm to about 30 nm.

There is great difficulty in maintaining performance improvements indevices of deeply submicron generations. One general approach forimproving performance is to try to increase carrier (electron and/orhole) mobilities. A promising avenue toward better carrier mobility isto apply tensile or compressive stress in the semiconductor channelregions. Typically, it may be preferable to have the channel of electronconduction type devices, such as NFET, in tensile stress, while to havethe channel of hole conduction type devices, such as PFET, incompressive stress.

Methods that are used to apply stress to planar devices, such as stressliners, may be less effective in three dimensional (3D) FETs, such as aFin-FET, or Tri-Gate devices. Embodiments of the present invention applycompressive stress to Fin-FET device channels, which then may besuitable for PFET application. In embodiments of the invention one maytake advantage of the fact that when silicon is thermally oxidized avolume expansion is taking place. The resulting oxide (SiO₂) volume isclose to twice that of the Si which has not been oxidized. If the Siwhich is turned into oxide occupied a confined, or partially confined,place the resulting oxide would exert significant pressure onto theconfining elements that resist its expansion. In representativeembodiments of the invention compressive stress in Fin-FET channels isachieved using such oxide induced pressure. Typically, attaining suchcompressive stress in Fin-FET channels does not require extra maskingsteps in comparison to a standard fabrication process resulting in nostressed device channels.

FIG. 1 symbolically shows a semiconductor fin, at a commencing stage ofthe processing of an embodiment of the invention. Such an embodiment mayinclude a method for fabricating an FET device structure having Fin-FETdevices, and may include the structure itself. This initial stage isthat of receiving a semiconductor fin 20 which is of a silicon basedmaterial. The term of receiving is intended to be inclusive of anypossible manner by which one may arrive at this initial stage of theembodiment. The processing may have just reached this stage offabrication, or the fin 20 may have been supplied by some source. Thematerial of the semiconductor fin 20 is a Si based material, which maybe essentially pure silicon (Si), but may also be a silicon-germanium(SiGe) alloy, typically with less than 30% Ge content, or Si with carbonSi:C, typically with less than 5% C content. The fin material inrepresentative embodiments of the invention is in single-crystal form.

In typical embodiments of the instant invention the fin 20 is supportedby a platform 10, which maybe be a buried oxide layer (BOX). Such BOXlayer is typical in the art, but embodiments of the present invention donot depend on the platform 10 being a BOX layer. The platform 10supporting the fin 20 could be of differing insulators, semiconductors,possibly of metallic substances, or any other known one for suchpurposes without limitation. The structures shown in the figures usuallyare part of a larger integrated circuit (IC) on a chip. The drawingstypically may only depict a small fraction of a circuit, or even a smallfraction of a single device structure.

The fin 20 naturally defines a length direction, indicated in FIG. 1with the two sided arrow 100. The fin 20 lies along an essentiallystraight line which is in the length direction. The fin 20 has sidewalls22 running along the length direction, which sidewalls are typicallyfree standing. The fin also has an ending cross section 23, which istypically perpendicular to the length direction.

Manufacturing of NFET, PFET, and Fin-FET devices is established in theart. It is understood that there are large number of steps involved insuch processing, and each step may have practically endless variations,known to those skilled in the art. For embodiments of this disclosure itis understood that the whole range of known processing techniques areavailable for fabricating the devices, and only those process steps willbe detailed that are related to the embodiments of the presentinvention.

FIGS. 2 to 4 show, without intent of limiting, a fabrication path fromthe fin 20 of FIG. 1 toward a representative structure of an embodimentof the invention depicted in FIG. 5. FIG. 2 symbolically showsrespective regions and masking of the semiconductor fin, depicting astage in the process which defines first and second regions along thefin. A hardmask 30, such as silicon nitride for example, is depositedand patterned, as it would normally be used to define the active regionof the individual fins. For an embodiment of the present invention, thehardmask 30 is instrumental in defining two adjoining regions of the finin the length direction a first region 20′ and a second region which isthe part of the fin 20 beneath the mask 30. The indicator number 20′implies that at this point the first region is a portion of the finitself.

FIG. 3 symbolically shows a stage in the fabrication following theconversion of the first regions 20′ into oxide elements 50, 50′. Theexposed first regions are oxidized in manners known in the art, by dryor wet thermal oxidation. To promote oxidation, one may implant speciesknown to have oxidation enhancing effects, such as fluorine (F), oramorphize the first regions prior to oxidation. In typical embodimentsof the invention the whole of the semiconductor material of the firstregions is converted into oxide, typically SiO₂. If the first regions20′ are alloyed, such as with Ge or C, naturally the composition of theoxide element 50 would reflect the alloying.

FIG. 4 symbolically shows a stage in the fabrication following removalof the mask 30, hence the second region 20″ is now visible. At thispoint in the fabrication the second region is a portion of theoriginally received fin 20. The oxide element 50 exerts pressure ontothe second region 20″. This pressure is due, as discussed earlier, tothe fact that oxidation of silicon results in a large volume increase.The volume of the oxide element is about twice that of the materialoriginally in the first portion 20′. The pressure in the lengthdirection results in a compressive stress on the second portion 20″ inthe length direction.

FIG. 4 shows an alternating sequence of oxide elements 50 and secondregions 20″ along the length direction. Embodiments of the presentinvention are not restricted to a plurality of these elements. Onesingle fin region 20″ adjoining one single oxide element 50 is includedin embodiments of the present invention. One oxide element 50, whichturned into oxide when a first region 20′ adjoining the second region20″ is converted into oxide, is already exerting longitudinal pressureonto a region which is adjoining it. At the same time, a case withhundreds or more, of oxide elements 50 and second regions 20″ inalternating sequence along the length direction is also included amongstembodiments of the present invention. In a typical embodiment of theinvention an end portion if the fin is defined to be a first region, andhence converted into oxide 50′. The notation of 50′ indicates that theending oxide element is and oxide element 50, but in a selectedlocation, namely at the end of the alternating sequence, and it has onlya single adjoining second region 20″. Usually the alternating sequencehas oxide elements 50′ at both of its ends.

FIG. 5 symbolically shows a stressed FET device structure 200 in anembodiment of the disclosure. The fabrication follows the state shown inFIG. 4, by processing Fin-FET devices 70 in the second regions 20″.Consequently, after the completion of the Fin-FET devices, the secondregions 20″ of the starting fin 20 now are the fins of the individualFin-FET devices 70. The fabrication of the Fin-FET devices 70 mayproceed along known lines in the art.

The Fin-FET devices, as displayed in FIG. 5, as well as all Fin-FETdevices in embodiments of the present disclosure may be any kind ofFin-FET devices, fabricated in any manner. They may be, for example, andwithout intent of limiting, oxide dielectric or high-k dielectricdevices, they may be polysilicon gate or metal gate devices, or of anyfurther kind. The fabrication may have so called gate first, or gatelast, variations, or further kinds. Accordingly, the Fin-FET 70 devicesshown in the figures may be regarded as representative embodiments ofFin-FET devices in general.

The fins 20″ of the Fin-FET device 70 have ending cross sections, wherethe oxide elements 50, 50′ are exerting pressure onto the fins in thelength direction. The result is that this pressure on the fins 20″ istransferring to the Fin-FET device 70 channel, which becomescompressively stressed.

Compressive stress in the device channel is desired in PFET devices,because the compressive stress increases the p-type carrier, the hole,mobility. Accordingly, in typical embodiments of the present invention,an FET device structure 200 containing the oxide elements and theFin-FET devices, are such that the Fin-FET devices have been processedto become PFET devices. Consequently, the FET device structure 200 is aPFET device structure.

In the same manner as with reference to FIG. 4, FIG. 5 also shows analternating sequence of oxide elements 50, 50′ and Fin-FET devices 70along the length direction. However, embodiments of the presentinvention are not restricted to a plurality of these elements. Onesingle Fin-FET device 70 having its fin's ending cross section abuttedfrom one side by one oxide element 50, 50′ which is pressing in thelength direction, is an embodiment of the present invention. If oneoxide element 50, or 50′ if it is an end portion, pressuring on a fin20″ which fin may contain several Fin-FET devices 70 lined up along thelength direction, and without further oxide elements 50 between them, isalso an embodiment of the present invention.

In an FET device structure 200 of an embodiment of the invention, thepressure that the oxide elements 50 are exerting may have measures, orcharacteristics, that are indicative in regard to the origin of theoxide elements. Namely, that the oxide elements 50 have been created byconverting a portion of the fin 20, the first regions 20′, into oxide.Such measure of the pressure, may simply be the magnitude of the exertedpressure. Or, a measure may be a characteristic pressure gradient overthe ending cross section of the fin. A further measure may be acorrelation between the dimension of the oxide element—such as crosssection, length, the ratio of these two, or others—and the magnitude ofthe pressure. Since the volume ratio of a silicon based material and itsoxide are well known, and mechanical properties, such as stiffness andelasticity moduli, of the silicon based material and its oxide are asalso well know, the measures, or characteristics, of the pressure may becalculated. Such calculation may be carried out as numerical simulationsto a high degree of accuracy. The measures of the pressure can also bedetermined experimentally, and the calculated and measured resultcompared. The calculation, and experiment may extend beyond the directpressure of the oxide element, and include the magnitude of compressionin the channel of the Fin-FET devices. Comparison of measured andcalculated measures of the pressure and compression indicate the originof the oxide elements.

The oxide elements 50, 50′ may also show their origin through theirchemical composition. Various alloying elements of Si that make up thefin 20, may then also be found in the oxide elements.

FIG. 6 symbolically shows a member 110 of a Si based material at acommencing stage of the processing of an embodiment of the invention. Inthis embodiment the formation of oxide elements precedes the formationof fins. The resulting FET device structure 200′ is depicted in FIG. 10,FIGS. 6 to 9, without intent of limiting, show representative stagesalong the fabrication process. Some elements shown if FIGS. 6 to 10 areidentical or similar to ones already discussed in reference to FIGS. 1to 5. Such elements henceforth will be described only briefly, with theunderstanding that detailed reasoning and discussion has already beenpresented in reference to FIGS. 1 to 5.

The member 110 is of a silicon based material which may be essentiallypure silicon (Si), but may also be a silicon-germanium (SiGe) alloy,typically with less than 30% Ge content, or Si with carbon Si:C,typically with less than 5% C content. The member 110 in representativeembodiments of the invention is in single-crystal form. The member 110has been fabricated over a platform 10. The member 110 is typicallyrectangular, and has a length direction and a width direction. Thelength direction is indicated with a two sided arrow 100.

FIG. 7 symbolically shows regions and masking of the member in anembodiment of the disclosure. A hardmask 30 such as silicon nitride isdeposited and patterned. The hardmask 30 is instrumental in defining afirst region 110′ in the member 110, which is the region not covered bythe mask 30. The indicator number 110′ implies that at this point thefirst region is a portion of the member 110 itself. The first region110′ is in parallel with a width direction and extends fully across themember 110. The width direction is indicated by the two sided arrow 101.The length direction 100 and width direction 101 are essentiallyperpendicular to one another.

FIG. 8 symbolically shows oxide elements 50 in the semiconductor member110 at a further stage in processing. After the state of processingshown in FIG. 4, the first region 110′ is converted into an oxideelement 50, by dry or wet oxidation of the material of the first region110′. This conversion into oxide is done while mask 30 is in place,protecting the covered part of the member 110 from the oxidation. In thesame manner as discussed earlier, known oxidation promoting techniquesmay be used to facilitate the conversion of a first region 110′ into anoxide element 50.

FIG. 9 symbolically shows the state of fabrication after patterning ofthe semiconductor member. The term patterning customarily means, and itis used herein to mean, that in some manner, usually by lithography, afeature has been defined in a layer, typically a mask. Furthermore, byremoving material according to the defined features, elements underneaththe mask, in the present case the member 110, acquire a pattern. FIG. 9shows that except for the oxide element 50, the member 110 has beenpatterned. The patterning was such that the remaining portion of themember forms N fins 21 in a row in parallel with the length direction100, and spaced apart of each other in the width direction 101. Inembodiments “N” is an integer number, which typically is from 2 to thehundreds or more, but being 1 is not excluded. The oxide element 50abuts the N fins, and exerts pressure in the length direction onto thefins 21. As shown in FIGS. 9 and 10, N equals 2, since there are twofins 21 shown which are side by side in the width direction 101, and areabutted by the oxide element 50. Such a pattern in the figures isrepeated several times in the length direction 100. The number of finsin each row is typically the same, but having differing numbers of finsin differing rows is not excluded.

FIG. 10 symbolically shows a stressed FET device structure 200′ in anembodiment of the disclosure. The fabrication of the FET devicestructure follows the state shown in FIG. 9, by processing Fin-FETdevices 70 in the fins 21. The processing of the Fin-FET devices 70 mayproceed along known lines in the art. The FET device structure 200′ hasa number N of Fin-FET devices in a row having fins 21. The number “N”typically is from 2 to the hundreds or more, but being 1 is notexcluded. The fins 21 have ending cross sections aligned substantiallyin the width direction 101. An oxide element 50, 50′ extends in thewidth direction abutting the ending cross sections of the fins, andexerts pressure onto the fins 21 in the length direction 100. The devicechannels of the Fin-FET devices are compressively stressed due to thepressure exerted on the fins 21 by the oxide elements 50, 50. FIG. 10depicts an alternating sequence in the length direction of Fin-FETdevices 70 in a row with oxide elements 50, 51. The number of Fin-FETdevices 70 in each row is typically the same, but having differingnumbers of Fin-FET devices in differing rows is not excluded. Each oxideelement exerts the pressure onto the fins in the length direction. Ineach row of Fin-FET devices the device channels that are compressivelystressed. The alternating sequence of FIG. 10 has three Fin-FET devicerows, with each row containing two Fin-FET devices. The alternatingsequence has two opposite ending locations, with each being an oxideelement 50′. In the same manner as discussed in reference to FIGS. 4 and5, embodiments depicted in FIGS. 9 and 10 of the present invention arenot restricted to an alternating sequence of elements. One oxide element50 or 50′ pressing from one side on one row of N fins 21, which fins 21each may contain one Fin-FET device 70, or several Fin-FET devices 70lined up along the length direction, and without further oxide elements50 between them, is understood to be an embodiment of the presentinvention.

The pressure exerted by the oxide elements 50, 50′ may have measures, orcharacteristics, that are indicative in regard to the origin of theoxide elements. Namely, that the oxide elements 50, 51 have been createdby converting portions of the original member 110 into oxide prior tothe patterning which resulted in the fins 21. The nature of the possiblemeasures of the pressure, has already been discussed in reference toFIG. 5, which discussion also carries here to the presently discussedembodiment, in the same way as the discussion regarding the chemicalcomposition of the oxide elements is also carried over.

As compressive stress in the device channel is desired in PFET devices,in typical embodiments of the present invention the FET device structure200′ is such that its Fin-FET devices have been processed to become PFETdevices. Consequently the FET device structure 200′ is a PFET devicestructure.

In CMOS fabrication it may be desirable that the compressive stress becontained within the PFET regions. For embodiments of instant inventionthis may be accomplished with a proper sequence of masking. The NFET maynot become oxidized because the masks 30 applied for defining oxidizedregions could also cover all of the NFET regions. Alternatively, theNFET regions may become oxidized in some places, but then the stresswould be removed by etching away the oxide. Such etching may be done inany step that the PFET devices are covered, for example when implantingthe source/drain of the NFET devices. The NFET devices may also undergoprocesses to induce tensile stress in their channels, for instance withstress liners.

In the foregoing specification, the invention has been described withreference to specific embodiments. However, one of ordinary skill in theart appreciates that various modifications and changes can be madewithout departing from the scope of the present invention as set forthin the claims below. Accordingly, the specification and figures are tobe regarded in an illustrative rather than a restrictive sense, and allsuch modifications are intended to be included within the scope ofpresent invention.

In addition, any specified material or any specified dimension of anystructure described herein is by way of example only. Furthermore, aswill be understood by those skilled in the art, the structures describedherein may be made or used in the same way regardless of their positionand orientation. Accordingly, it is to be understood that terms andphrases such as “under,” “upper”, “side,” “over”, “underneath”,“perpendicular”, “length or width directions”, etc., as used hereinrefer to relative location and orientation of various portions of thestructures with respect to one another, and are not intended to suggestthat any particular absolute orientation with respect to externalobjects is necessary or required.

The foregoing specification also describes processing steps. It isunderstood that the sequence of such steps may vary in differentembodiments from the order that they were detailed in the foregoingspecification. Consequently, the ordering of processing steps in theclaims, unless specifically stated, for instance, by such adjectives as“before” or “after”, does not imply or necessitate a fixed order of stepsequence.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any element(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature, or element, of any or all the claims.

Many modifications and variations of the present invention are possiblein light of the above teachings, and could be apparent for those skilledin the art. The scope of the invention is defined by the appendedclaims.

The invention claimed is:
 1. An FET device structure, comprising: aFin-FET device having a fin of a Si based material, which fin is hostinga Fin-FET device channel, wherein said fin extends away from said devicechannel along a substantially straight line defining a length direction,and wherein said fin has an ending cross section; an oxide elementabutting said ending cross section, wherein said oxide element isexerting a pressure onto said fin in said length direction; andadditional ones of said Fin-FET device having additional fins hostingadditional device channels, in an alternating sequence in said lengthdirection with additional ones of said oxide element, wherein each oneof said additional oxide element exerts said pressure onto at least oneof said additional fins in said length direction, wherein each one ofsaid additional device channels is compressively stressed; wherein saidFin-FET device channel is compressively stressed due to said pressure onsaid fin.
 2. The FET device structure of claim 1, wherein a measure ofsaid pressure indicates that each one of said additional oxide elementhas been formed by conversion of a portion of said additional fins intosaid oxide element.
 3. The FET device structure of claim 1, wherein saidalternating sequence has an ending location, wherein said endinglocation contains one of said oxide element.
 4. The FET device structureof claim 1, wherein said FET device structure is a PFET devicestructure.
 5. An FET device structure, comprising: a number N of Fin-FETdevices in a row having N fins, which fins are aligned substantially inparallel with a length direction and spaced apart of each otherperpendicularly to said length direction, wherein said N Fin-FET deviceshave N device channels, wherein said N fins have ending cross sectionsaligned substantially perpendicular to said length direction; an oxideelement extending perpendicularly to said length direction, abuttingsaid ending cross sections and exerting a pressure onto said N fins insaid length direction; and wherein said N device channels arecompressively stressed due to said pressure on said N fins.
 6. The FETdevice structure of claim 5, wherein said N fins are a remaining portionafter a patterning of a rectangular member of a Si based material, andwherein a measure of said pressure indicates that said oxide element hasbeen formed prior to said patterning, by conversion of a portion of saidrectangular member into said oxide element.
 7. The FET device structureof claim 5, further comprising Fin-FET devices having fins in additionalones of said row, in an alternating sequence in said length directionwith additional ones of said oxide element, wherein each one of saidadditional oxide element exerts said pressure onto said fins in saidlength direction in said additional ones of said row, and wherein saidFin-FET devices in said additional ones of said row have device channelsthat are compressively stressed.
 8. The FET device structure of claim 7,wherein a measure of said pressure indicates that each one of saidadditional oxide element has been formed prior to said patterning, byconversion of an additional portion of said rectangular member into saidoxide element.
 9. The FET device structure of claim 7, wherein saidalternating sequence has an ending location, wherein said endinglocation contains one of said oxide element.
 10. The FET devicestructure of claim 5, wherein said FET device structure is a PFET devicestructure.
 11. An FET device structure comprising: a first fin having alength direction, the first fin including an oxide element and a secondregion, the oxide element and second region being arranged in the lengthdirection of the first fin, the second region adjoining the oxideelement and being comprised of a silicon based semiconductor material,the oxide element comprised of an oxide of the silicon basedsemiconductor material, both the second region and the oxide elementforming integral portions of the first fin, the oxide element exertingpressure on the second region in the length direction and causing acompressive stress on the second region in the length direction; ap-type Fin-FET device including a channel, the second region of thefirst fin comprising the channel of the p-type Fin-FET device, thechannel being compressively stressed by the pressure exerted by theoxide element.
 12. The FET device structure of claim 11, wherein thefirst fin further includes a plurality of integral oxide elements and aplurality of second regions arranged in alternating sequence in thelength direction, further including a plurality of Fin-FET devices, eachof the Fin-FET devices including a channel comprised of a portion of oneof the second regions of the first fin and compressively stressed by oneof the oxide elements.
 13. The FET device structure of claim 11, furtherincluding an additional fin comprised of the silicon based semiconductormaterial, the additional fin being parallel to the first fin, the oxideelement forming an integral portion of the additional fin, and anadditional Fin-FET device including a channel comprised of a portion ofthe additional fin and compressively stressed by the oxide element. 14.The FET device structure of claim 11, wherein the first fin includes afirst region including the silicon based semiconductor material whollyconverted into the oxide of the silicon based semiconductor material,the oxide element comprising the first region.